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| SOT23 SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE "SuperBAT" ISSUE 1- NOVEMBER 1997 FEATURES: * Low V F * High Current Capability APPLICATIONS: * DC - DC converters * Mobile telecomms * PCMCIA PARTMARK DETAIL: S76 7 1 ZHCS756 C 1 A 3 2 3 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER Continuous Reverse Voltage Forward Current (Continuous) Forward Voltage @ IF = 750mA Average Peak Forward Current; D.C. = 50% Non Repetitive Forward Current t100s t10ms Power Dissipation at Tamb= 25 C Storage Temperature Range Junction Temperature SYMBOL VR IF VF IFAV IFSM Ptot Tstg Tj VALUE 60 750 610 1500 12 5 500 -55 to + 150 125 UNIT V mA mV mA A A mW C C ELECTRICAL CHARACTERISTICS (at Tamb = 25 C unless otherwise stated). PARAMETER Reverse Breakdown Voltage Forward Voltage SYMBOL V (BR)R VF MIN. 60 TYP. 80 250 285 350 440 520 600 760 50 17 12 290 330 410 500 610 700 900 100 MAX. UNIT V mV mV mV mV mV mV mV A pF ns CONDITIONS. IR= 300A IF= IF= IF= IF= IF= IF= IF= 50mA* 100mA* 250mA* 500mA* 750mA* 1000mA* 1500mA* Reverse Current Diode Capacitance Reverse Recovery Time IR CD trr V R= 45V f= 1MHz,V R= 25V switched from IF = 500mA to IR = 500mA Measured at IR = 50mA *Measured under pulsed conditions. Pulse width= 300s; duty cycle 2% . ZHCS756 TYPICAL CHARACTERISTICS 1 100m IR - Reverse Current (A) IF - Forward Current (A) 10m 1m 100u 10u 1u 100n +125C +100C 100m +50C +25C 10m 1m +125C +25C -55C 1m -55C 0 0.1 0.2 0.3 0.4 0.5 0.6 0 20 40 60 VF - Forward Voltage (V) VR - Reverse Voltage (V) IF v VF IR v VR 1 0.5 p I F(pk) PF(av) - Avg Pwr Diss (W) DC Typical t 1 Typical D=t 1/t IF(av) - Avg Fwd Cur (A) Tj=125 C 0.8 D=0.5 t p 0.4 0.3 0.2 0.1 0 DC D=0.5 D=0.2 D=0.1 D=0.05 t 1 0.6 D=0.2 I F(av) =DxI PF(av) =I F(av) F(pk) xV F 0.4 D=0.1 D=t 1/t p I F(pk) 0.2 0 D=0.05 t p I F(av) =DxI PF(av) =I F(av) F(pk) xV F 60 70 80 90 100 110 120 0 0.2 0.4 0.6 0.8 1 TC - Case Temperature ( C) IF(av) - Avg Fwd Curr (A) IF(av) v TC PF(av) v IF(av) 125 Rth=100C/W Rth=200C/W Rth=300C/W 160 CD - Diode Capacitance (pF) Ta - Ambient Temp (C) 100 80 75 1 10 100 0 0 20 40 60 VR - Reverse Voltage (V) VR - Reverse Voltage (V) Ta v VR CD v VR ZHCS756 TYPICAL CHARACTERISTICS MAXIMUM TRANSIENT THERMAL RESISTANCE * Reference above figure, devices were mounted on a 15mmx15mm ceramic substrate. |
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